Low temperature high-mobility InZnO thin-film transistors fabricated by excimer laser annealing

摘要

In this study, we successfully achieved a relatively high field-effect mobility of 37.7?cm2/Vs in an InZnO thin-film transistor (TFT) fabricated by excimer layer annealing (ELA). The ELA process allowed us to fabricate such a high-performance InZnO TFT at the substrate temperature less than 50?°C according to thermal calculation. Our analysis revealed that high-energy irradiation in ELA produced a mixed phase of InZnO and SiO2, leading to the deterioration of TFT characteristics.